Challenges and Opportunities for High Frequency InP Integrated Circuits

Short-Abstract—Recent advances in InP semiconductor device design and high-yield processing have led to the demonstration of transistors with power gain cut-off frequencies (fmax) greater than 1 THz. More importantly, the devices are supported by low-loss interconnects, accurate models and robust design kits. Employing a systematic design methodology that includes significant EM and thermal modeling, we have demonstrated circuit components for transceivers up to 670 GHz and power amplifiers with >100mW of output power operating at 230 GHz. Insertion of these high frequency chips requires additional breakthroughs in packaging, and thermal management. Other applications of the technology would allow the high gain-bandwidth to be traded for high dynamic range and efficiency at mmWave frequencies.